This work analyzes the effect of nanosecond laser pulse deposition of GaAs in an inert atmosphere of Ar and He.The number of\r\npulses and the gas pressure were varied and the effect on the nanoparticles formation was studied by scanning electron microscopy,\r\ngrazing incidence small angle X-ray scattering, and atomic force microscopy. It is shown that the GaAs nanoparticle sizes and size\r\ndistributions can be controlled partly by the number of laser pulses applied during their production and partly by the choice of\r\ninert gas and its pressure. Our results suggest that He is a more promising working gas producing narrower size distributions and\r\na better size control of the grown nanoparticles
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